Part Number Hot Search : 
TSP350AL 44355110 MAX2247 WC1602K DC1000 SRL4030P NTE316 48A54E2
Product Description
Full Text Search
 

To Download WTC2304 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 WTC2304
N-Channel Enhancement Mode Power MOSFET
P b Lead(Pb)-Free
1 GATE 3 DRAIN
DRAIN CURRENT 2.7 AMPERS DRAIN SOUCE VOLTAGE 25 VOLTAGE
Features:
*Super High Dense Cell Design For Low RDS(ON) RDS(ON)<117m @VGS=10V *Rugged and Reliable
2 SOURCE
3 1 2
Application:
*Capable of 2.5V Gate Drive *Simple Drive Requirement *SOT-23 Package ( Maximum Ratings(TA=25 Rating
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 ,VGS@4.5V(TA ,VGS@4.5V(TA Pulsed Drain Current1,2 Total Power Dissipation(TA=25 ) Maximum Junction-ambient3 Operating Junction and Storage Temperature Range
SOT-23
Unless Otherwise Specified) Symbol
VDS VGS ID IDM PD R
JA
Value
20
Unit
V
12 3.2 2.6 10 1.38 90 -55~+150 W /W A
TJ, Tstg
Device Marking
WTC2302=2302
http:www.weitron.com.tw
WEITRON
1/6
09-May-05
WTC2302
Electrical Characteristics (TA = 25
Characteristic Unless otherwise noted) Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage VGS=0,ID=250A Gate-Source Threshold Voltage VDS=VGS,ID=250A Gate-Source Leakage Current VGS= 12V Drain-Source Leakage Current(Tj=25) VDS=20V,VGS=0 Drain-Source Leakage Current(Tj=70) VDS=20V,VGS=0 Drain-Source On-Resistance VGS=4.5V,ID=3.6A VGS=2.5V,ID=3.1A Forward Transconductance VDS=5V,ID=3.6A gfs RDS(on) 6 85 115 m IDSS 10 V(BR)DSS VGS(Th) IGSS 20 0.5 V 1.2 nA
100 1
A
S
Dynamic
Input Capacitance VGS=0V,VDS=10V,f=1.0MHz Output Capacitance VGS=0V,VDS=10V,f=1.0MHz Reverse Transfer Capacitance VGS=0V,VDS=10V,f=1.0MHz Ciss Coss Crss 145 100 50 pF
http:www.weitron.com.tw
WEITRON
2/6
09-May-05
WTC2302
Switching
Turn-on Delay Time2 VDS=10V,VGS=5V,ID=3.6A,RD=2.8,RG=6 Rise Time VDS=10V,VGS=5V,ID=3.6A,RD=2.8,RG=6 Turn-off Delay Time VDS=10V,VGS=5V,ID=3.6A,RD=2.8,RG=6 Fall Time VDS=10V,VGS=5V,ID=3.6A,RD=2.8,RG=6 Total Gate Charge2 VDS=10V,VGS=4.5V,ID=3.6A Gate-Source Charge VDS=10V,VGS=4.5V,ID=3.6A Gate-Drain Change VDS=10V,VGS=4.5V,ID=3.6A td(on) 5.2 37 15 5.7 4.4 0.6 1.9 ns td (off) nC
tr
tf
Qg Qgs Qgd
Source-Drain Diode Characteristics
Forward On Voltage2
VGS=0V,IS=1.6A
VSD
-
-
1.2 1 10
V
Continuous Source Current(Body Diode) VD=VG=0V,VS=1.2V Pulsed Source Current(Body Diode)1
IS ISM
A A
Note: 1. Pulse width limited by Max, junction temperature. 2. pulse width300s, duty cycle2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270/W when mounted on min, copper pad.
http:www.weitron.com.tw
WEITRON
3/6
09-May-05
WTC2302
10 5
TA=25C
4.5V 3.5V
TA=150C
4.5V 3.5V 3.0V 2.5V
ID ,DRAIN CURRENT (A)
8
4
2.5V
ID ,Drain Current (A)
3.0V
6
VG=2.0V
3
VG=2.0V
4
2
2
1
0
0
0.0 0.5 1.0 1.5 2.0 2.5
0.0
0.5
1.0
1.5
2.0
2.5
FIG.1 Typical Output Characteristics
100 1.8
VDS ,DRAIN-TO-SOURCE VOLTAGE(V)
Fig.2 Typical Output Characteristics
VDS ,Drain-to-source Voltage(V)
90
ID = 3.1A TA = 25C Normalized RDs(on)
1.6 1.4 1.2 1.0 0.8
ID = 3.6A VG = 4.5V
RDs(on) (m)
80
70
60
2
Fig.3 On-Resistance v.s. Gate Voltage
10.0 1.4
VGS ,Gate-to-source Voltage(V)
3
4
5
0.6
-50
0
50
100
150
Fig.4 Normalized OnResistance
Tj ,Junction Temperature(C)
1.0
VGS(th)(V)
1.3
1.0
Tj = 150C
Tj = 25C
IF( A )
0.6
0
0
Fig.5 Forward Characteristics of Reverse Diode
VDS ,Source-to-Drain Voltage(V)
0.5
0.9
0.2
-50
Fig.6 Gate Threshold Voltage v.s. Junction Temperature
Tj ,Junction Temperature(C)
0
50
100
150
WEITRON
http://www.weitron.com.tw
4/6
09-May-05
WTC2302
1000
f = 1.0MHz
VGS , Gate to Source Voltage(V)
12 10 8 6 4 2 0
ID = 3.6A VDS = 4.5V
Ciss
C(pF)
100
Coss Crss
0
2
4
6
8
10
0
1
5
9
13
17
21
25
29
Fig 7. Gate Charge Characteristics
100
QG , Total Gate Charge(nC)
VDS, Drain-to-Source Voltage(V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor = 0.5 0.2
10
Normalized Thermal Response(R ja)
0.1
0.1 0.05
PDM
ID(A)
1
1ms 10ms
0.01
0.01
t T
0.1
TA = 25C Single Pulse
0.01
100ms Is DC
1 10 100
Duty factor = t / T Peak Tj=PDM x R ju + Tu R ja=270C / W
Single pulse
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
0.1
VDS , Drain-to-Source Voltage(V)
t, Pulse Width(s)
Fig 9. Maximum Safe Operation Area
VDS 90%
Fig 10. Effective Transient Thermal Impedance
VG QG QGS QGD
4.5V
10% VGS td(on) tr td(off) tf Charge Q
Fig 11. Switching Time Circuit
Fig.12 Gate Charge Waveform
WEITRON
http://www.weitron.com.tw
5/6
09-May-05
WTC2302
SOT-23 Outline Dimension
SOT-23
A
TOP VIEW D E G H
B
C
K J L M
Dim A B C D E G H J K L M
Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076
Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25
WEITRON
http://www.weitron.com.tw
6/6
09-May-05


▲Up To Search▲   

 
Price & Availability of WTC2304

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X